François Andrieu, Mikaël Casse, E. Baylac, P. Perreau, O. Nier, D. Rideau, R. Berthelon, F. Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, R. Ranica, N. Planes, W. Schwarzenbach, E. Richard, E. Josse, O. Weber, F. Arnaud, Maud Vinet, Olivier Faynot, M. Haond. Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 106-109, IEEE, 2014. [doi]
@inproceedings{AndrieuCBPNRBPPSGMBGGCBRPSRJWAVFH14,
title = {Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs},
author = {François Andrieu and Mikaël Casse and E. Baylac and P. Perreau and O. Nier and D. Rideau and R. Berthelon and F. Pourchon and A. Pofelski and B. De Salvo and C. Gallon and Vincent Mazzocchi and D. Barge and C. Gaumer and O. Gourhant and A. Cros and V. Barral and R. Ranica and N. Planes and W. Schwarzenbach and E. Richard and E. Josse and O. Weber and F. Arnaud and Maud Vinet and Olivier Faynot and M. Haond},
year = {2014},
doi = {10.1109/ESSDERC.2014.6948769},
url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948769},
researchr = {https://researchr.org/publication/AndrieuCBPNRBPPSGMBGGCBRPSRJWAVFH14},
cites = {0},
citedby = {0},
pages = {106-109},
booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4378-4},
}