Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio, Ramon Canal, Antonio González. Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells. In David Atienza, Yuan Xie, José L. Ayala, Ken S. Stevens, editors, Proceedings of the 21st ACM Great Lakes Symposium on VLSI 2010, Lausanne, Switzerland, May 2-6, 2011. pages 277-282, ACM, 2011. [doi]
Abstract is missing.