A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier

John Barth, William R. Reohr, Paul C. Parries, Gregory Fredeman, John Golz, Stanley Schuster, Richard E. Matick, Hillery Hunter, Charles Tanner, Joseph Harig, Hoki Kim, Babar Khan, John Griesemer, Robert Havreluk, Kenji Yanagisawa, Toshiaki Kirihata, Subramanian S. Iyer. A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier. In 2007 IEEE International Solid-State Circuits Conference, ISSCC 2007, Digest of Technical Papers, San Francisco, CA, USA, February 11-15, 2007. pages 486-617, IEEE, 2007. [doi]

Abstract

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