Reliability study of power RF LDMOS device under thermal stress - researchr publication authors

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M. A. Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon. Reliability study of power RF LDMOS device under thermal stress. Microelectronics Journal, 38(2):164-170, 2007. [doi]

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