M. Masmoudi - researchr alias

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Viewing Publication 1 - 21 from 21

2017

Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signaturesN. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry. mr, 76:243-248, 2017. [doi]

2015

An athermal measurement technique for long time constants traps characterization in GaN HEMT transistorsAlexis Divay, M. Masmoudi, Olivier Latry, C. Duperrier, Farid Temcamani. mr, 55(9-10):1703-1707, 2015. [doi]

2013

2012

A multiobjective stochastic program for hospital bed planningFouad Ben Abdelaziz, M. Masmoudi. jors, 63(4):530-538, 2012. [doi]

Self-Calibration of Output Match and Reverse Isolation in LNAs Based Switchable ResistorR. M. Ayadi, S. Mahresi, M. Masmoudi. et, 28(2):167-176, 2012. [doi]

2010

2009

Topological Sensitivity Analysis for the Location of Small Cavities in Stokes FlowA. Ben Abda, M. Hassine, M. Jaoua, M. Masmoudi. siamco, 48(5):2871-2900, 2009. [doi]

2007

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing testsM. A. Belaïd, K. Ketata, M. Gares, K. Mourgues, M. Masmoudi, J. Marcon. mr, 47(1):59-64, 2007. [doi]

Reliability study of power RF LDMOS device under thermal stressM. A. Belaïd, K. Ketata, K. Mourgues, M. Gares, M. Masmoudi, J. Marcon. mj, 38(2):164-170, 2007. [doi]

Study of hot-carrier effects on power RF LDMOS device reliabilityM. Gares, M. A. Belaïd, H. Maanane, M. Masmoudi, J. Marcon, K. Mourgues, Ph. Eudeline. mr, 47(9-11):1394-1399, 2007. [doi]

2006

Electrical parameters degradation of power RF LDMOS device after accelerated ageing testsM. A. Belaïd, K. Ketata, M. Masmoudi, M. Gares, H. Maanane, J. Marcon. mr, 46(9-11):1800-1805, 2006. [doi]

Hot carrier reliability of RF N- LDMOS for S Band radar applicationM. Gares, H. Maanane, M. Masmoudi, P. Bertram, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, Ph. Eudeline. mr, 46(9-11):1806-1811, 2006. [doi]

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de PuissanceM. Gares, H. Maanane, M. A. Belaïd, M. Masmoudi, J. Marcon, K. Mourgues, P. Bertram, Ph. Eudeline. ccece 2006: 382-385 [doi]

A reliable guideline to maximize the detection and analysis of deep level defects: Comparison between DLTS analysis techniquesM. Hanine, M. Masmoudi. mj, 37(11):1188-1193, 2006. [doi]

Study of RF N:::-::: LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RFH. Maanane, M. Masmoudi, J. Marcon, M. A. Belaïd, K. Mourgues, C. Tolant, K. Ketata, Ph. Eudeline. mr, 46(5-6):994-1000, 2006. [doi]

2005

Comparative analysis of accelerated ageing effects on power RF LDMOS reliabilityM. A. Belaïd, K. Ketata, K. Mourgues, H. Maanane, M. Masmoudi, J. Marcon. mr, 45(9-11):1732-1737, 2005. [doi]

Mechanical-thermal noise in CMOS micromachined inductive microphoneB. Mezghani, F. Tounsi, S. Smaoui, M. B. Jallouli, M. Masmoudi. icecsys 2005: 1-4 [doi]

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