Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology

Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu. Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. J. Solid-State Circuits, 36(9):1373-1381, 2001. [doi]

Abstract

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