Marise Bafleur - researchr alias

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Viewing Publication 1 - 23 from 23

2018

Energy-harvesting powered variable storage topology for battery-free wireless sensorsF. El Mahboubi, Marise Bafleur, V. Boitier, Jean-Marie Dilhac. mocast 2018: 1-4 [doi]

A power management system using reconfigurable storage scheme for batteryless wireless sensor nodesA. Siskos, F. El Mahboubi, V. Boitier, Th. Laopoulos, Marise Bafleur. mocast 2018: 1-4 [doi]

2017

2016

A multifunctional device as both strain sensor and energy harvester for structural health monitoringZheng Jun Chew, Tingwen Ruan, Meiling Zhu, Marise Bafleur, Jean-Marie Dilhac. ieeesensors 2016: 1-3 [doi]

Impact of non-linear capacitances on transient waveforms during system level ESD stressFrédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur. mr, 64:88-92, 2016. [doi]

2015

Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technologyHoussam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka. mr, 55(9-10):1476-1480, 2015. [doi]

EditorialMarise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier. mr, 55(9-10):1269-1270, 2015. [doi]

20 GHz on-chip measurement of ESD waveform for system level analysisFabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran. mr, 55(11):2276-2283, 2015. [doi]

2014

Reliability of ESD protection devices designed in a 3D technologyBertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet. mr, 54(9-10):2272-2277, 2014. [doi]

2013

Towards Energy Autonomy of Wireless Sensors in Aeronautics Applications: SMARTER Collaborative ProjectMarise Bafleur, Jean-Marie Dilhac. greencom 2013: 1668-1672 [doi]

2011

MOS-IGBT power devices for high-temperature operation in smart power SOI technologyHoussam Arbess, Marise Bafleur. mr, 51(9-11):1980-1984, 2011. [doi]

Comparative study of sensitive volume and triggering criteria of SEB in 600 V planar and trench IGBTsMoustafa Zerarka, Patrick Austin, Marise Bafleur. mr, 51(9-11):1990-1994, 2011. [doi]

2007

Identification of the physical signatures of CDM induced latent defects into a DC-DC converter using low frequency noise measurementsYuan Gao, Nicolas Guitard, Christophe Salamero, Marise Bafleur, Laurent Bary, Laurent Escotte, Patrick Gueulle, Lionel Lescouzères. mr, 47(9-11):1456-1461, 2007. [doi]

2004

2002

In the memory of Georges CharitatMarise Bafleur. mr, 42(8):1153-1154, 2002. [doi]

2001

Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technologyGéraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu. jssc, 36(9):1373-1381, 2001. [doi]

1999

The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulationChristelle Delage, Nicolas Nolhier, Marise Bafleur, Jean-Marie Dorkel, Jo Hamid, Philippe Givelin, Jacques Lin-Kwang. jssc, 34(9):1283-1289, 1999. [doi]

1996

A current conveyor based BIC sensor for current monitoring in mixed-signal circuitsStelios Siskos, Th. Laopoulos, Alkiviades A. Hatzopoulos, Marise Bafleur. icecsys 1996: 1210-1212 [doi]

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