Predicting Shot-Level SRAM Read/Write Margin Based on Measured Transistor Characteristics

Shu-Yung Bin, Shih-Feng Lin, Ya Ching Cheng, Wen-Rong Liau, Alex Hou, Mango C.-T. Chao. Predicting Shot-Level SRAM Read/Write Margin Based on Measured Transistor Characteristics. IEEE Trans. VLSI Syst., 24(2):625-637, 2016. [doi]

@article{BinLCLHC16,
  title = {Predicting Shot-Level SRAM Read/Write Margin Based on Measured Transistor Characteristics},
  author = {Shu-Yung Bin and Shih-Feng Lin and Ya Ching Cheng and Wen-Rong Liau and Alex Hou and Mango C.-T. Chao},
  year = {2016},
  doi = {10.1109/TVLSI.2015.2418998},
  url = {http://dx.doi.org/10.1109/TVLSI.2015.2418998},
  researchr = {https://researchr.org/publication/BinLCLHC16},
  cites = {0},
  citedby = {0},
  journal = {IEEE Trans. VLSI Syst.},
  volume = {24},
  number = {2},
  pages = {625-637},
}