A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node - researchr publication related

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J. Bourgeat, Philippe Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier. A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. Microelectronics Reliability, 51(9-11):1614-1617, 2011. [doi]

The following publications are possibly variants of this publication:

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nmJ. Bourgeat, Christophe Entringer, Philippe Galy, M. Bafleur, D. Marin-Cudraz. mr, 50(9-11):1379-1382, 2010. [doi]

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