A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node

J. Bourgeat, Philippe Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier. A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node. Microelectronics Reliability, 51(9-11):1614-1617, 2011. [doi]

Abstract

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