J. Bourgeat - researchr alias

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Viewing Publication 1 - 6 from 6

2014

New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technologyPhilippe Galy, J. Bourgeat, D. Marin-Cudraz. icicdt 2014: 1-4 [doi]

2013

Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF applicationPhilippe Galy, T. Lim, J. Bourgeat, J. Jimenez, B. Heitz, D. Marin-Cudraz, Ph. Benech, J. M. Fournier. mr, 53(9-11):1284-1287, 2013. [doi]

2012

Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technologyPhilippe Galy, J. Bourgeat, J. Jimenez, N. Guitard, A. Dray, G. Troussier, B. Jacquier, D. Marin-Cudraz. mr, 52(9-10):1998-2004, 2012. [doi]

2011

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm nodeJ. Bourgeat, Philippe Galy, A. Dray, J. Jimenez, D. Marin-Cudraz, B. Jacquier. mr, 51(9-11):1614-1617, 2011. [doi]

(2×2) matrix ESD power devices for advanced CMOS technologiesPhilippe Galy, J. Bourgeat, J. Jimenez, B. Jacquier, D. Marin-Cudraz, Sylvain Dudit. mr, 51(9-11):1608-1613, 2011. [doi]

2010

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nmJ. Bourgeat, Christophe Entringer, Philippe Galy, M. Bafleur, D. Marin-Cudraz. mr, 50(9-11):1379-1382, 2010. [doi]

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