Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes - researchr publication authors

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A. Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, S. Mhira, E. Kussener, E. Pauly, Vincent Huard. Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. In 22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2016, Sant Feliu de Guixols, Spain, July 4-6, 2016. pages 43-46, IEEE, 2016. [doi]

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