Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes

A. Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, S. Mhira, E. Kussener, E. Pauly, Vincent Huard. Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes. In 22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2016, Sant Feliu de Guixols, Spain, July 4-6, 2016. pages 43-46, IEEE, 2016. [doi]

@inproceedings{BravaixSCFNMKPH16,
  title = {Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodes},
  author = {A. Bravaix and M. Saliva and Florian Cacho and X. Federspiel and C. Ndiaye and S. Mhira and E. Kussener and E. Pauly and Vincent Huard},
  year = {2016},
  doi = {10.1109/IOLTS.2016.7604669},
  url = {http://dx.doi.org/10.1109/IOLTS.2016.7604669},
  researchr = {https://researchr.org/publication/BravaixSCFNMKPH16},
  cites = {0},
  citedby = {0},
  pages = {43-46},
  booktitle = {22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2016, Sant Feliu de Guixols, Spain, July 4-6, 2016},
  publisher = {IEEE},
  isbn = {978-1-5090-1507-8},
}