GaN nanodot fabrication by implant source growth

R. Buckmaster, J. H. Yoo, K. Shin, Y. Yao, T. Sekiguchi, M. Yokoyama, T. Hanada, T. Goto, M. Cho, Y. Kawazoe. GaN nanodot fabrication by implant source growth. Microelectronics Journal, 36(3-6):456-459, 2005. [doi]

@article{BuckmasterYSYSYHGCK05,
  title = {GaN nanodot fabrication by implant source growth},
  author = {R. Buckmaster and J. H. Yoo and K. Shin and Y. Yao and T. Sekiguchi and M. Yokoyama and T. Hanada and T. Goto and M. Cho and Y. Kawazoe},
  year = {2005},
  doi = {10.1016/j.mejo.2005.02.046},
  url = {http://dx.doi.org/10.1016/j.mejo.2005.02.046},
  tags = {source-to-source, peer-to-peer, open-source},
  researchr = {https://researchr.org/publication/BuckmasterYSYSYHGCK05},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Journal},
  volume = {36},
  number = {3-6},
  pages = {456-459},
}