Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology - researchr publication authors

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Anni Cao, Xin Li, Liang Wang, Jianpeng Zhang, Chunliang Gou, Liquan Liu, Bi Wang, Xing Zhang, Yuanfu Zhao. Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology. In IEEE Asia Pacific Conference on Circuit and Systems, APCCAS 2022, Shenzhen, China, November 11-13, 2022. pages 528-531, IEEE, 2022. [doi]

This author has not been identified. Look up 'Anni Cao' in GoogleThis author has not been identified. Look up 'Xin Li' in GoogleThis author has not been identified. Look up 'Liang Wang' in GoogleThis author has not been identified. Look up 'Jianpeng Zhang' in GoogleThis author has not been identified. Look up 'Chunliang Gou' in GoogleThis author has not been identified. Look up 'Liquan Liu' in GoogleThis author has not been identified. Look up 'Bi Wang' in GoogleThis author has not been identified. Look up 'Xing Zhang' in GoogleThis author has not been identified. Look up 'Yuanfu Zhao' in Google

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