Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology

Anni Cao, Xin Li, Liang Wang, Jianpeng Zhang, Chunliang Gou, Liquan Liu, Bi Wang, Xing Zhang, Yuanfu Zhao. Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology. In IEEE Asia Pacific Conference on Circuit and Systems, APCCAS 2022, Shenzhen, China, November 11-13, 2022. pages 528-531, IEEE, 2022. [doi]

@inproceedings{CaoLWZGLWZZ22,
  title = {Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology},
  author = {Anni Cao and Xin Li and Liang Wang and Jianpeng Zhang and Chunliang Gou and Liquan Liu and Bi Wang and Xing Zhang and Yuanfu Zhao},
  year = {2022},
  doi = {10.1109/APCCAS55924.2022.10090320},
  url = {https://doi.org/10.1109/APCCAS55924.2022.10090320},
  researchr = {https://researchr.org/publication/CaoLWZGLWZZ22},
  cites = {0},
  citedby = {0},
  pages = {528-531},
  booktitle = {IEEE Asia Pacific Conference on Circuit and Systems, APCCAS 2022, Shenzhen, China, November 11-13, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-5073-7},
}