Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology - researchr publication related

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Anni Cao, Xin Li, Liang Wang, Jianpeng Zhang, Chunliang Gou, Liquan Liu, Bi Wang, Xing Zhang, Yuanfu Zhao. Total Dose and Single Event Effects on 16 Mbit Standalone Spin-Transfer Torque MRAM with 45 nm CMOS Technology. In IEEE Asia Pacific Conference on Circuit and Systems, APCCAS 2022, Shenzhen, China, November 11-13, 2022. pages 528-531, IEEE, 2022. [doi]

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