Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li. A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications. In 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), Kyoto, Japan, June 11-16, 2023. pages 1-2, IEEE, 2023. [doi]
Abstract is missing.