A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-V$_{\rm TH}$ Read-Port, and Offset Cell VDD Biasing Techniques - researchr publication

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Meng-Fan Chang, Ming-Bin Chen, Lai-Fu Chen, Shu-Meng Yang, Yao-Jen Kuo, Jui-Jen Wu, Hsiu-Yun Su, Yuan-Hua Chu, Wen-Chin Wu, Tzu-Yi Yang, Hiroyuki Yamauchi. A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-V$_{\rm TH}$ Read-Port, and Offset Cell VDD Biasing Techniques. J. Solid-State Circuits, 48(10):2558-2569, 2013. [doi]

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