Edward Yi Chang, Quang-Ho Luc, Huy-Binh Do, Yueh-Chin Lin. Performance improvement of InGaAs FinFET using NH3 treatment. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 577-579, IEEE, 2017. [doi]
@inproceedings{ChangLDL17,
title = {Performance improvement of InGaAs FinFET using NH3 treatment},
author = {Edward Yi Chang and Quang-Ho Luc and Huy-Binh Do and Yueh-Chin Lin},
year = {2017},
doi = {10.1109/ASICON.2017.8252541},
url = {https://doi.org/10.1109/ASICON.2017.8252541},
researchr = {https://researchr.org/publication/ChangLDL17},
cites = {0},
citedby = {0},
pages = {577-579},
booktitle = {12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017},
editor = {Yajie Qin and Zhiliang Hong and Ting-Ao Tang},
publisher = {IEEE},
isbn = {978-1-5090-6625-4},
}