Performance improvement of InGaAs FinFET using NH3 treatment

Edward Yi Chang, Quang-Ho Luc, Huy-Binh Do, Yueh-Chin Lin. Performance improvement of InGaAs FinFET using NH3 treatment. In Yajie Qin, Zhiliang Hong, Ting-Ao Tang, editors, 12th IEEE International Conference on ASIC, ASICON 2017, Guiyang, China, October 25-28, 2017. pages 577-579, IEEE, 2017. [doi]

Abstract

Abstract is missing.