Steeper Subthreshold Swing Attained in Ge-Source Inductive Tunneling FET via Epitaxial Tunnel Layer for Suppressed Point Tunneling

Yen-Chen Chang, Wei Heng Tai, Jyi-Tsong Lin. Steeper Subthreshold Swing Attained in Ge-Source Inductive Tunneling FET via Epitaxial Tunnel Layer for Suppressed Point Tunneling. In 15th IEEE International Conference on ASIC, ASICON 2023, Nanjing, China, October 24-27, 2023. pages 1-4, IEEE, 2023. [doi]

Abstract

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