On the Restore Operation in MTJ-Based Nonvolatile SRAM Cells - researchr publication related

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Ke Chen, Jie Han, Fabrizio Lombardi. On the Restore Operation in MTJ-Based Nonvolatile SRAM Cells. IEEE Trans. VLSI Syst., 23(11):2695-2699, 2015. [doi]

The following publications are possibly variants of this publication:

On the Nonvolatile Performance of Flip-Flop/SRAM Cells With a Single MTJKe Chen, Jie Han, Fabrizio Lombardi. tvlsi, 23(6):1160-1164, 2015. [doi]

An 8T/Cell FeFET-Based Nonvolatile SRAM with Improved Density and Sub-fJ Backup and Restore EnergyJianfeng Wang, Nuo Xiu, Juejian Wu, Yiming Chen, Yanan Sun 0003, Huazhong Yang, Vijaykrishnan Narayanan, Sumitha George, Xueqing Li. iscas 2022: 3408-3412 [doi]

A novel sort error hardened 10T SRAM cells for low voltage operationIn-Seok Jung, Yong-Bin Kim, Fabrizio Lombardi. mwscas 2012: 714-717 [doi]

RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applicationsAlbert Lee, Meng-Fan Chang, Chien-Chen Lin, Chien-Fu Chen, Mon-Shu Ho, Chia-Chen Kuo, Pei-Ling Tseng, Shyh-Shyuan Sheu, Tzu-Kun Ku. vlsic 2015: 76 [doi]

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