16-Mb synchronous DRAM with 125-Mbyte/s data rate - researchr publication authors

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Yunho Choi, MyungHo Kim, Hyunsoon Jang, Taejin Kim, Seung-Hoon Lee, Ho-Cheol Lee, Churoo Park, Siyeol Lee, Cheol-soo Kim, Soo-In Cho, Ejaz Haq, J. Karp, Daeje Chin. 16-Mb synchronous DRAM with 125-Mbyte/s data rate. J. Solid-State Circuits, 29(4):529-533, April 1994. [doi]

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