The following publications are possibly variants of this publication:
- A 2.5-V, 333-Mb/s/pin, 1-Gbit, double-data-rate synchronous DRAMHongil Yoon, Gi-Won Cha, Changsik Yoo, Nam-Jong Kim, Keum-Yong Kim, Chang-Ho Lee, Kyu-Nam Lim, Kyuchan Lee, Jun Young Jeon, Tae-Sung Jung, Hongsik Jeong, Tae-Young Chung, Kinam Kim, Soo-In Cho. jssc, 34(11):1589-1599, 1999. [doi]
- A 3.3-V single power supply 16-Mb nonvolatile virtual DRAM using a NAND flash memory technologyTae-Sung Jung, Do-Chan Choi, Sung Hee Cho, Myong-Jae Kim, Seung-Keun Lee, Byung-Soon Choi, Jin-Sun Yum, San-Hong Kim, Dong-Gi Lee, Jong-Chang Son, Myung-Sik Yong, Heung-Kwun Oh, Sung-Bu Jun, Woung-Moo Lee, E. Haq, Kang-Deog Suh, S. B. Ali, Hyung Kyu Lim. jssc, 32(11):1748-1757, 1997. [doi]