Yunho Choi, MyungHo Kim, Hyunsoon Jang, Taejin Kim, Seung-Hoon Lee, Ho-Cheol Lee, Churoo Park, Siyeol Lee, Cheol-soo Kim, Soo-In Cho, Ejaz Haq, J. Karp, Daeje Chin. 16-Mb synchronous DRAM with 125-Mbyte/s data rate. J. Solid-State Circuits, 29(4):529-533, April 1994. [doi]
@article{ChoiKJKLLPLKCHKC94,
title = {16-Mb synchronous DRAM with 125-Mbyte/s data rate},
author = {Yunho Choi and MyungHo Kim and Hyunsoon Jang and Taejin Kim and Seung-Hoon Lee and Ho-Cheol Lee and Churoo Park and Siyeol Lee and Cheol-soo Kim and Soo-In Cho and Ejaz Haq and J. Karp and Daeje Chin},
year = {1994},
month = {April},
doi = {10.1109/4.280704},
url = {https://doi.org/10.1109/4.280704},
researchr = {https://researchr.org/publication/ChoiKJKLLPLKCHKC94},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {29},
number = {4},
pages = {529-533},
}