A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme

Ki Chul Chun, Yong-Ki Kim, Yesin Ryu, Jaewon Park, Chi Sung Oh, Young-Yong Byun, So-Young Kim, Dong-Hak Shin, Jun Gyu Lee 0002, Byung-Kyu Ho, Min-Sang Park, Seong Jin Cho, Seunghan Woo, Byoung-Mo Moon, Beomyong Kil, Sungoh Ahn, Jae-Hoon Lee, Sooyoung Kim, Seouk-Kyu Choi, Jae-Seung Jeong, Sung-Gi Ahn, Jihye Kim, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Jung-Bae Lee. A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme. J. Solid-State Circuits, 56(1):199-211, 2021. [doi]

Abstract

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