Physical model for GaN HEMT design optimization in high frequency switching applications - researchr publication authors

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D. Cucak, Miroslav Vasic, O. Garcia, Yves Bouvier, J. Oliver, Pedro Alou, J. A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, F. Calle. Physical model for GaN HEMT design optimization in high frequency switching applications. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 393-396, IEEE, 2014. [doi]

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