D. Cucak, Miroslav Vasic, O. Garcia, Yves Bouvier, J. Oliver, Pedro Alou, J. A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, F. Calle. Physical model for GaN HEMT design optimization in high frequency switching applications. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 393-396, IEEE, 2014. [doi]
@inproceedings{CucakVGBOACWMRC14,
title = {Physical model for GaN HEMT design optimization in high frequency switching applications},
author = {D. Cucak and Miroslav Vasic and O. Garcia and Yves Bouvier and J. Oliver and Pedro Alou and J. A. Cobos and A. Wang and S. Martin-Horcajo and F. Romero and F. Calle},
year = {2014},
doi = {10.1109/ESSDERC.2014.6948843},
url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948843},
researchr = {https://researchr.org/publication/CucakVGBOACWMRC14},
cites = {0},
citedby = {0},
pages = {393-396},
booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4378-4},
}