RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design

Hritom Das, Manu Rathore, Rocco Febbo, Maximilian Liehr, Nathaniel C. Cady, Garrett S. Rose. RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design. In Himanshu Thapliyal, Ronald F. DeMara, Inna Partin-Vaisband, Srinivas Katkoori, editors, Proceedings of the Great Lakes Symposium on VLSI 2023, GLSVLSI 2023, Knoxville, TN, USA, June 5-7, 2023. pages 281-286, ACM, 2023. [doi]

@inproceedings{DasRFLCR23,
  title = {RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design},
  author = {Hritom Das and Manu Rathore and Rocco Febbo and Maximilian Liehr and Nathaniel C. Cady and Garrett S. Rose},
  year = {2023},
  doi = {10.1145/3583781.3590211},
  url = {https://doi.org/10.1145/3583781.3590211},
  researchr = {https://researchr.org/publication/DasRFLCR23},
  cites = {0},
  citedby = {0},
  pages = {281-286},
  booktitle = {Proceedings of the Great Lakes Symposium on VLSI 2023, GLSVLSI 2023, Knoxville, TN, USA, June 5-7, 2023},
  editor = {Himanshu Thapliyal and Ronald F. DeMara and Inna Partin-Vaisband and Srinivas Katkoori},
  publisher = {ACM},
}