RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design

Hritom Das, Manu Rathore, Rocco Febbo, Maximilian Liehr, Nathaniel C. Cady, Garrett S. Rose. RFAM: RESET-Failure-Aware-Model for HfO2-based Memristor to Enhance the Reliability of Neuromorphic Design. In Himanshu Thapliyal, Ronald F. DeMara, Inna Partin-Vaisband, Srinivas Katkoori, editors, Proceedings of the Great Lakes Symposium on VLSI 2023, GLSVLSI 2023, Knoxville, TN, USA, June 5-7, 2023. pages 281-286, ACM, 2023. [doi]

Abstract

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