The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks

Timothy O. Dickson, Kenneth H. K. Yau, Theodoros Chalvatzis, Alain M. Mangan, Ekaterina Laskin, Rudy Beerkens, Paul Westergaard, Mihai Tazlauanu, Ming-Ta Yang, Sorin P. Voinigescu. The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks. J. Solid-State Circuits, 41(8):1830-1845, 2006. [doi]

@article{DicksonYCMLBWTY06,
  title = {The Invariance of Characteristic Current Densities in Nanoscale MOSFETs and Its Impact on Algorithmic Design Methodologies and Design Porting of Si(Ge) (Bi)CMOS High-Speed Building Blocks},
  author = {Timothy O. Dickson and Kenneth H. K. Yau and Theodoros Chalvatzis and Alain M. Mangan and Ekaterina Laskin and Rudy Beerkens and Paul Westergaard and Mihai Tazlauanu and Ming-Ta Yang and Sorin P. Voinigescu},
  year = {2006},
  doi = {10.1109/JSSC.2006.875301},
  url = {https://doi.org/10.1109/JSSC.2006.875301},
  researchr = {https://researchr.org/publication/DicksonYCMLBWTY06},
  cites = {0},
  citedby = {0},
  journal = {J. Solid-State Circuits},
  volume = {41},
  number = {8},
  pages = {1830-1845},
}