Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs - researchr publication authors

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Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei-Dong Zhang, Nour E. Bourzgui, Ali Soltani. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6:42721-42728, 2018. [doi]

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