Karol Kalna - researchr alias

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Viewing Publication 1 - 14 from 14

2020

Benchmarking of FinFET, Nanosheet, and Nanowire FET Architectures for Future Technology NodesDaniel Nagy, Gabriel Espineira, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Karol Kalna, Natalia Seoane. access, 8:53196-53202, 2020. [doi]

2019

Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETsDaniel Nagy, Guillermo Indalecio Fernández, Antonio J. García-Loureiro, Gabriel Espineira, Muhammad A. Elmessary, Karol Kalna, Natalia Seoane. access, 7:12790-12797, 2019. [doi]

2018

Optimisation of lateral super-junction multi-gate MOSFET for high drive current and low specific on-resistance in sub-100 V applicationsOlujide Adenekan, Paul Holland, Karol Kalna. mj, 81:94-100, 2018. [doi]

Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTsSteven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei-Dong Zhang, Nour E. Bourzgui, Ali Soltani. access, 6:42721-42728, 2018. [doi]

2017

2015

Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshesManuel Aldegunde, Karol Kalna. cphysics, 189:31-36, 2015. [doi]

Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at SubthresholdGuillermo Indalecio Fernández, Natalia Seoane, Manuel Aldegunde, Karol Kalna, Antonio J. García-Loureiro. jolpe, 11(2):256-262, 2015. [doi]

2011

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled TransistorsAntonio J. García-Loureiro, Natalia Seoane, Manuel Aldegunde, R. Valin, Asen Asenov, A. Martinez, Karol Kalna. tcad, 30(6):841-851, 2011. [doi]

2010

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshesManuel Aldegunde, Natalia Seoane, Antonio J. García-Loureiro, Karol Kalna. cphysics, 181(1):24-34, 2010. [doi]

Impact of interface state trap density on the performance characteristics of different III-V MOSFET architecturesB. Benbakhti, J. S. Ayubi-Moak, Karol Kalna, D. Lin, G. Hellings, G. Brammertz, K. De Meyer, I. Thayne, Asen Asenov. mr, 50(3):360-364, 2010. [doi]

2007

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETsManuel Aldegunde, Antonio J. GarcÃa-Loureiro, Karol Kalna. lssc 2008: 115-122 [doi]

2001

Scaling of pHEMTs to Decanano DimensionsKarol Kalna, Asen Asenov, K. Elgaid, I. Thayne. vlsi, 2001(1):435-439, 2001. [doi]

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