Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs

Steven J. Duffy, Brahim Benbakhti, Karol Kalna, Mohammed Boucherta, Wei-Dong Zhang, Nour E. Bourzgui, Ali Soltani. Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs. IEEE Access, 6:42721-42728, 2018. [doi]

@article{DuffyBKBZBS18,
  title = {Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs},
  author = {Steven J. Duffy and Brahim Benbakhti and Karol Kalna and Mohammed Boucherta and Wei-Dong Zhang and Nour E. Bourzgui and Ali Soltani},
  year = {2018},
  doi = {10.1109/ACCESS.2018.2861323},
  url = {https://doi.org/10.1109/ACCESS.2018.2861323},
  researchr = {https://researchr.org/publication/DuffyBKBZBS18},
  cites = {0},
  citedby = {0},
  journal = {IEEE Access},
  volume = {6},
  pages = {42721-42728},
}