A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Satoshi Eto, Masato Matsumiya, Masato Takita, Yuki Ishii, Toshikazu Nakamura, Kuninori Kawabata, Hideki Kano, Ayako Kitamoto, Toshimi Ikeda, Toru Koga, Mitsuhiro Higashiho, Yuji Serizawa, Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Masao Taguchi. A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. J. Solid-State Circuits, 33(11):1697-1702, 1998. [doi]

This author has not been identified. Look up 'Satoshi Eto' in GoogleThis author has not been identified. Look up 'Masato Matsumiya' in GoogleThis author has not been identified. Look up 'Masato Takita' in GoogleThis author has not been identified. Look up 'Yuki Ishii' in GoogleThis author has not been identified. Look up 'Toshikazu Nakamura' in GoogleThis author has not been identified. Look up 'Kuninori Kawabata' in GoogleThis author has not been identified. Look up 'Hideki Kano' in GoogleThis author has not been identified. Look up 'Ayako Kitamoto' in GoogleThis author has not been identified. Look up 'Toshimi Ikeda' in GoogleThis author has not been identified. Look up 'Toru Koga' in GoogleThis author has not been identified. Look up 'Mitsuhiro Higashiho' in GoogleThis author has not been identified. Look up 'Yuji Serizawa' in GoogleThis author has not been identified. Look up 'Kazuo Itabashi' in GoogleThis author has not been identified. Look up 'Osamu Tsuboi' in GoogleThis author has not been identified. Look up 'Yuji Yokoyama' in GoogleThis author has not been identified. Look up 'Masao Taguchi' in Google

runs on WebDSL