Satoshi Eto, Masato Matsumiya, Masato Takita, Yuki Ishii, Toshikazu Nakamura, Kuninori Kawabata, Hideki Kano, Ayako Kitamoto, Toshimi Ikeda, Toru Koga, Mitsuhiro Higashiho, Yuji Serizawa, Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Masao Taguchi. A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. J. Solid-State Circuits, 33(11):1697-1702, 1998. [doi]
@article{EtoMTINKKKIKHSI98,
title = {A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line},
author = {Satoshi Eto and Masato Matsumiya and Masato Takita and Yuki Ishii and Toshikazu Nakamura and Kuninori Kawabata and Hideki Kano and Ayako Kitamoto and Toshimi Ikeda and Toru Koga and Mitsuhiro Higashiho and Yuji Serizawa and Kazuo Itabashi and Osamu Tsuboi and Yuji Yokoyama and Masao Taguchi},
year = {1998},
doi = {10.1109/4.726562},
url = {https://doi.org/10.1109/4.726562},
researchr = {https://researchr.org/publication/EtoMTINKKKIKHSI98},
cites = {0},
citedby = {0},
journal = {J. Solid-State Circuits},
volume = {33},
number = {11},
pages = {1697-1702},
}