Satoshi Eto, Masato Matsumiya, Masato Takita, Yuki Ishii, Toshikazu Nakamura, Kuninori Kawabata, Hideki Kano, Ayako Kitamoto, Toshimi Ikeda, Toru Koga, Mitsuhiro Higashiho, Yuji Serizawa, Kazuo Itabashi, Osamu Tsuboi, Yuji Yokoyama, Masao Taguchi. A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. J. Solid-State Circuits, 33(11):1697-1702, 1998. [doi]
Abstract is missing.