Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics - researchr publication authors

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M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T. Devoivre, J. Jomaah, G. Ghibaudo. Low frequency noise and reliability properties pf 0.12 mum CMOS devices with Ta::2::O::5:: as gate dielectrics. Microelectronics Reliability, 41(9-10):1361-1366, 2001.

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