Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

Ming-Long Fan, Shao-Yu Yang, Vita Pi-Ho Hu, Yin-Nien Chen, Pin Su, Ching-Te Chuang. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits. Microelectronics Reliability, 54(4):698-711, 2014. [doi]

@article{FanYHCSC14,
  title = {Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits},
  author = {Ming-Long Fan and Shao-Yu Yang and Vita Pi-Ho Hu and Yin-Nien Chen and Pin Su and Ching-Te Chuang},
  year = {2014},
  doi = {10.1016/j.microrel.2013.12.026},
  url = {http://dx.doi.org/10.1016/j.microrel.2013.12.026},
  researchr = {https://researchr.org/publication/FanYHCSC14},
  cites = {0},
  citedby = {0},
  journal = {Microelectronics Reliability},
  volume = {54},
  number = {4},
  pages = {698-711},
}