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Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits

Ming-Long Fan, Shao-Yu Yang, Vita Pi-Ho Hu, Yin-Nien Chen, Pin Su, Ching-Te Chuang. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits. Microelectronics Reliability, 54(4):698-711, 2014. [doi]

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