$W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity - researchr publication authors

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Yihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell. $W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact Resistivity. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 179-180, IEEE, 2019. [doi]

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