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Hooman Farkhani, Ali Peiravi, Farshad Moradi. A new write assist technique for SRAM design in 65 nm CMOS technology. Integration, 50:16-27, 2015. [doi]
Possibly Related PublicationsThe following publications are possibly variants of this publication: A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technologyHooman Farkhani, Ali Peiravi, Farshad Moradi. mj, 45(11):1556-1565, 2014. [doi] 8T-SRAM Cell with Improved Read and Write Margins in 65 nm CMOS TechnologyFarshad Moradi, Mohammad Tohidi, Behzad Zeinali, Jens Kargaard Madsen. vlsi 2015: 95-109 [doi]
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