A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology

Hooman Farkhani, Ali Peiravi, Farshad Moradi. A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology. Microelectronics Journal, 45(11):1556-1565, 2014. [doi]

Abstract

Abstract is missing.