Hooman Farkhani, Ali Peiravi, Farshad Moradi. A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology. Microelectronics Journal, 45(11):1556-1565, 2014. [doi]
@article{FarkhaniPM14,
title = {A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology},
author = {Hooman Farkhani and Ali Peiravi and Farshad Moradi},
year = {2014},
doi = {10.1016/j.mejo.2014.09.006},
url = {http://dx.doi.org/10.1016/j.mejo.2014.09.006},
researchr = {https://researchr.org/publication/FarkhaniPM14},
cites = {0},
citedby = {0},
journal = {Microelectronics Journal},
volume = {45},
number = {11},
pages = {1556-1565},
}