A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology - researchr publication authors

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Hooman Farkhani, Ali Peiravi, Farshad Moradi. A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology. Microelectronics Journal, 45(11):1556-1565, 2014. [doi]

This author has not been identified. Look up 'Hooman Farkhani' in GoogleThis author has not been identified. Look up 'Ali Peiravi' in GoogleThis author has not been identified. Look up 'Farshad Moradi' in Google

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