A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology - researchr publication references

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Hooman Farkhani, Ali Peiravi, Farshad Moradi. A new asymmetric 6T SRAM cell with a write assist technique in 65 nm CMOS technology. Microelectronics Journal, 45(11):1556-1565, 2014. [doi]

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