Tianming Feng, Jebreel M. Salem, Dong Sam Ha. High temperature VCO based on GaN devices for downhole communications. In IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017. pages 1-4, IEEE, 2017. [doi]
@inproceedings{FengSH17-1,
title = {High temperature VCO based on GaN devices for downhole communications},
author = {Tianming Feng and Jebreel M. Salem and Dong Sam Ha},
year = {2017},
doi = {10.1109/ISCAS.2017.8050448},
url = {https://doi.org/10.1109/ISCAS.2017.8050448},
researchr = {https://researchr.org/publication/FengSH17-1},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Symposium on Circuits and Systems, ISCAS 2017, Baltimore, MD, USA, May 28-31, 2017},
publisher = {IEEE},
isbn = {978-1-4673-6853-7},
}