Characterization of silicon field effect transistor sub-THz detectors for imaging systems

Péter Földesy. Characterization of silicon field effect transistor sub-THz detectors for imaging systems. In 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012, Seoul, Korea (South), May 20-23, 2012. pages 934-937, IEEE, 2012. [doi]

Abstract

Abstract is missing.