Hiroki Fujisawa, Masayuki Nakamura, Yasuhiro Takai, Yasuji Koshikawa, Tatsuya Matano, Seiji Narui, Narikazu Usuki, Chiaki Dono, Shinichi Miyatake, Makoto Morino, Koji Arai, Shuichi Kubouchi, Isamu Fujii, Hideyuki Yoko, Takao Adachi. 1.8-V 800-Mb/s/pin DDR2 and 2.5-V 400-Mb/s/pin DDR1 compatibly designed 1Gb SDRAM with dual-clock input-latch scheme and hybrid multi-oxide output buffer. J. Solid-State Circuits, 40(4):862-869, 2005. [doi]
Abstract is missing.